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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 100 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT32CZPT CURRENT 3 Ampere FEATURE * Small flat package. ( SC-73/SOT-223 ) * Suitable for high packing density. * High saturation current capability. 6.50+0.20 3.00+0.10 SC-73/SOT-223 1.65+0.15 0.90+0.05 2.0+0.3 CONSTRUCTION * PNP SILICON Transistor 0.70+0.10 0.70+0.10 2.30+0.1 3.5+0.2 7.0+0.3 0.9+0.2 2.0+0.3 0.70+0.10 4.60+0.1 0.27+0.05 0.01~0.10 1 1 Base 3 2 CIRCUIT (1) B C (3) 2 Emitter 3 Collector ( Heat Sink ) E (2) Dimensions in millimeters SC-73/SOT-223 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Peak Collector Current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - Tamb 25 C; note 1 - MIN. MAX. -100 -100 -5.0 -3 -6.0 2 +150 150 +150 UNIT V V V A A W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHT32CZPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICEO IEBO hFE PARAMETER collector cut-off current emitter cut-off current CONDITIONS VCE= -60 V VEB=-5.0V - - 25 10 MIN. MAX. -300 -1 - 100 UNIT uA mA DC current gain IC = -1.0A; VCE = -4V IC = -3.0A; VCE = -4V VCEsat collector-emitter saturation voltage base-emitter saturation voltage transition frequency IC=-3.0A,IB=-375mA - -1.2 V VBEON fT IC =- 3.0A; VCE = -4V IC = -500mA; VCE = 1 0 V; f = 10 MHz - 3.0 -1.8 - V MHz |
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